Suzhou Nano Institute successfully mass-produced high-end LED epitaxial wafers

On January 29th , Suzhou Nano's semiconductor lighting LED industrialization achieved gratifying results, and developed a high-brightness, long-life blue LED with a wavelength of 455-460nm (for backlight), luminous power exceeding 22mw, Vf<3.2V, ESD ( 2000V)>90%, the indicators are the best in the domestic industry, and mass production has begun.

In 2008, China's LED industry reached 70 billion, and high-end epitaxial wafers have been the bottleneck for the development of China's LED industry. In 2009, Suzhou Nano is a member of Suzhou Najing Optoelectronics Co., Ltd., aiming to solve some key technical problems faced by the semiconductor lighting industry by utilizing Nano's advanced MOCVD equipment and process lines. After one year of efforts, Najing Optoelectronics Co., Ltd. The company's technical team solved a series of key issues of epitaxy and device technology, and successively made major breakthroughs in improving brightness, reducing LED operating voltage, and improving LED antistatic capability, and successfully transformed the research results of Nanotechnology into market products.

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At present, the best level of domestic LED epitaxial wafer is 15mW. The epitaxial wafer developed by Najing Optoelectronics Co., Ltd. through its proprietary technology can reach 22mW and the luminous efficiency reaches 100lm/w, reaching the international advanced level . And the product has the characteristics of long life, aging at 1000 mA for 1000 hours and attenuation is less than 5% (estimated life is 80,000 hours). After the product application market, it has been well received by users. (Suzhou Nano Institute)

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