GaN-on-glass process could yield 48% savings for LED epitaxy

A cost of ownership model for a deposition process developed by BluGlass Ltd could result in significant cost savings for LED manufacturing. Courtesy of Semiconductor Today .
BluGlass Ltd, a Sydney, Australia-based company spun off from Macquarie University in mid-2005, has released figures suggesting that its remote plasma (RP) CVD process for low-temperature deposition of GaN onto glass substrates (rather than conventional MOCVD on sapphire Can cut the cost of manufacturing GaN-based LEDs at both the epiwafer level and the assembled device level.
Independent assessment was carried out by US-based firm Wright, Williams & Kelly Inc (WWK), a cost -of-ownership modeling group for the semiconductor industry.
Wafer-level analysis showed a cost saving of 48% for RPCVD, driven by a significant reduction in materials and consumables costs. Also, in a simple package, the assessment showed that the RPCVD process leads to a 10% cost advantage at the final assembly Level for a simple blue LED device.
BluGlass has demonstrated deposition of GaN on 6-inch glass wafers, although the company has yet to demonstrate high quality emission from LED device layers on glass.
Visit the Semiconductor Today website to read the full version of this story.

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